Method of optimizing laser cutting of wafers for producing integrated circuit dies

ABSTRACT

A method for separating integrated circuit dies from a wafer includes making at least two cutting passes with a laser along a first die street of an integrated circuit die, the first die street extending along a first axis on the wafer. The method also includes making at least two cutting passes with the laser along a second die street of the integrated circuit die, the second die street extending along a second axis on the wafer that is generally perpendicular to the first axis. In one process, three cutting passes are made with the laser alternatingly along the first and second die streets to separate the integrated die circuit along the first and second axes. In another process, two cutting passes are made with the laser along the first die street in opposite directions, and two cutting passes are then made with the laser along the second die street in opposite directions.

INCORPORATION BY REFERENCE TO ANY PRIORITY APPLICATIONS

Any and all applications for which a foreign or domestic priority claimis identified in the Application Data Sheet as filed with the presentapplication are hereby incorporated by reference under 37 CFR 1.57.

BACKGROUND Field

Embodiments of the invention relate to methods of manufacturingintegrated circuits, and in particular, to methods of optimizing lasercutting of wafers in the production of integrated circuit dies.

Description of the Related Art

The manufacture of integrated circuit dies involves separating dies froma wafer of semiconductor following the processing of the wafer. One wayof separating dies from the wafer includes laser cutting of the wafer.However, laser processing can result in failures, including delaminationof die layers due to stresses generated during laser processing, andcorner cracks in the die due to die stress during laser processing.Another way of separating dies is a scribe and break process (e.g., amechanical process), which can reduce the die yield.

SUMMARY

There is a need for an improved laser processing (e.g., laser dicing,laser cutting) method for wafers that does not have some of thedrawbacks of existing laser processing methods.

In accordance with one aspect of the disclosure, a method for laserprocessing (e.g., laser cutting, laser dicing) of wafers to produceintegrated circuit dies is provided that reduces delamination of dielayers by at least 90% and improves production capacity (e.g., units perhour) by at least 40%.

In accordance with one aspect of the disclosure, a method of separatingintegrated circuit dies from a wafer is provided. The method comprisesmaking three cutting passes with a laser along a first die street of anintegrated circuit die, the first die street extending along a firstaxis on the wafer, and making three cutting passes with the laser alonga second die street of the integrated circuit die, the second die streetextending along a second axis on the wafer that is generallyperpendicular to the first axis. The three cutting passes along thefirst die street are alternatingly made with the three cutting passesalong the second die street, to thereby fully separate the integratedcircuit die from the wafer along the first and second axes.

In accordance with another aspect of the disclosure, a method ofseparating integrated circuit dies from a wafer is provided. The methodcomprises making two cutting passes with a laser along a first diestreet of an integrated circuit die, the first die street extendingalong a first axis on the wafer, and making two cutting passes with thelaser along a second die street generally perpendicular to the first diestreet, the second die street extending along a second axis generallyperpendicular to the first axis on the wafer. The two cutting passesalong the first die street are made before the two cutting passes alongthe second die street to thereby fully separate the integrated circuitdie from the wafer along the first and second die streets.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a wafer having a plurality of integratedcircuit dies.

FIG. 2 is a schematic view of a prior art laser cutting strategy forintegrated circuit dies.

FIG. 3 is a schematic view of an improved laser cutting strategy forintegrated circuit dies.

FIG. 4 is a block diagram of the method for laser processing ofintegrated circuit dies of FIG. 3 .

FIG. 5A is a partial top view of a portion of a wafer following one ormore laser passes using the improved laser cutting strategy of FIG. 3and method of FIG. 4 .

FIG. 5B is an image illustrating a cross-sectional view of a waferportion of FIG. 5A after each pass of the method of FIG. 4 .

FIG. 6 is a schematic view of a prior art laser cutting strategy forintegrated circuit dies.

FIG. 7 is an improved laser cutting strategy for integrated circuitdies.

FIG. 8 is a block diagram of the method for laser processing ofintegrated circuit dies of FIG. 7 .

FIG. 9A is a schematic block diagram of a wireless communication devicethat includes an integrated circuit die in accordance with one or moreembodiments.

FIG. 9B is a schematic block diagram of another wireless communicationdevice that includes an integrated circuit die in accordance with one ormore embodiments.

DETAILED DESCRIPTION

FIG. 1 shows a semiconductor wafer 10 that can be diced into a pluralityof integrated circuit (IC) dies 20 along streets 15 (e.g., die streets,wafer streets) of the wafer 10. One manner of dicing the wafer 10 intothe separate IC dies 20 involves use of a laser cutting machine 25 thatdirects a laser L at the wafer 10. Such laser cutting machines includeones manufactured by ASM Laser Separation International B.V of TheNetherlands (hereafter “ALSI”), and ones manufactured by DISCOCorporation of Japan (e.g., hereafter “DISCO”).

FIG. 2 shows a conventional schematic view of a laser cutting strategy30 used with ALSI machines, in which four cutting passes (1, 2, 3, 4)are first made in a Y direction 40, and then four cutting passes (5, 6,7, 8) are made in an X direction 50, after which a final cutting pass(9) is made in the Y direction 40.

FIG. 3 shows a schematic view of an improved laser cutting strategy 30′used with ALSI machines that requires fewer number of passes than theconventional laser cutting strategy 30 and that advantageously resultsin improved output of IC dies 20 and improved reduction in defects inthe IC dies 20. The laser cutting strategy 30′ advantageously minimizesoverheating of the corners of the IC die 20 during laser processing, sothat fewer corner crack (e.g., chipout) failures are exhibited, whileallowing for increased laser power to be used in the processing of theIC dies 20, thereby reducing the number of the laser cutting steps andincreasing output of IC dies 20, and resulting in IC dies 20 withcleaner die edges.

The laser cutting strategy 30′ includes three passes (1, 3, 5) made inthe Y direction 40′ and three passes (2, 4, 6) made in the X direction50′, where the passes in the Y direction 40′ and in the X direction 50′are made in an alternating manner (e.g., one pass in the Y direction40′, followed by one pass in the X direction 50′, etc.).

FIG. 4 shows a block diagram of a process 100 for laser processing of ICdies 20 from a wafer 10 using the laser cutting strategy 30′. At block110, the process makes a laser cut on the wafer 10 along a die street15A of an IC die 20 in a Y direction 40′ from an upper edge 42′ to alower edge 44′. At block 120, the process makes a laser cut on the wafer10 along a die street 15B of the IC die 20 in an X direction 40′ from aleft edge 52′ of the die 20 to a right edge 54′ of the die 20. At block130, the process makes a laser cut on the wafer 10 along the die street15A of the IC die 20 in the Y direction 40′ from the upper edge 42′ tothe lower edge 44′. At block 140, the process makes a laser cut on thewafer 10 along the die street 15B of the IC die 20 in the X direction40′ from the left edge 52′ of the die 20 to the right edge 54′ of thedie 20. At block 150, the process makes a laser cut on the wafer 10along the die street 15A of the IC die 20 in the Y direction 40′ fromthe upper edge 42′ to the lower edge 44′. At block 160, the processmakes a laser cut on the wafer 10 along the die street 15B of the IC die20 in the X direction 40′ from the left edge 52′ of the die 20 to theright edge 54′ of the die 20.

FIG. 5A shows a partial top view, and FIG. 5B shows a cross-sectionalview, of a wafer 10 along one axis X, Y during different passes 40′, 50′of the laser during cutting of the die 20 using an ALSI laser cuttingmachine and using the strategy laser cutting strategy 30′ As shown inFIG. 5B, the die 20 is fully cut along the die street 15 after threepasses.

FIG. 6 shows a conventional schematic view of a laser cutting strategy60 used with DISCO machines, in which four cutting passes (1, 2, 3, 4)are first made in the Y direction 40, and then four cutting passes (5,6, 7, 8) are made in the X direction 50.

FIG. 7 shows a schematic view of an improved laser cutting strategy 60′used with DISCO machines that requires fewer number of passes than theconventional laser cutting strategy 60 and that advantageously resultsin improved output of IC dies 20 and improved reduction in defects inthe IC dies 20. The laser cutting strategy 60′ advantageously minimizesoverheating of the corners of the IC die 20 during laser processing, sothat fewer corner crack (e.g., chipout) failures are exhibited, whileallowing for increased laser power to be used in the processing of theIC dies 20, thereby reducing the number of the laser cutting steps andincreasing output of IC dies 20, and resulting in IC dies 20 withcleaner die edges.

The laser cutting strategy 60′ includes two passes (1, 2) made in the Ydirection 70′ and two passes (3, 4) made in the X direction 80′, whereboth passes (1, 2) in the Y direction 70′ are made first, followed byboth passes (3, 4) and in the X direction 80′.

FIG. 8 shows a block diagram of a process 200 for laser processing of ICdies 20 from a wafer 10 using the laser cutting strategy 60′. At block210, the process makes a laser cut on the wafer 10 along a die street15A of an IC die 20 in a Y direction 70′ from an upper edge 72′ of theIC die 20 to a lower edge 74′ of the IC die 20. At block 220, theprocess makes a laser cut on the wafer 10 along the die street 15A ofthe IC die 20 in the Y direction 70′ from the lower edge 74′ of the ICdie 20 to the upper edge 72′ of the IC die 20. At block 230, the processmakes a laser cut on the wafer 10 along a die street 15B of the IC die20 in an X direction 80′ from a left edge 82′ of the IC die 20 to aright edge 84′ of the IC die 20. At block 240, the process makes a lasercut on the wafer 10 along the die street 15B of the IC die 20 in the Xdirection 80′ from the right edge 84′ of the IC die 20 to the left edge82′ of the IC die 20.

Table 1 shows parameters of the laser utilized for the conventionallaser cutting strategies 30, 60, including the thickness (in mils) ofthe wafer 10, the power level of the laser used during the cuttingprocess, the speed at which the laser moved over the wafer 10, and thenumber of passes in each of the X and Y directions (e.g., 3.5 passes inthe X direction, 3.5 passes in Y direction) used during the dicing ofthe IC dies 20 from the wafer 10.

TABLE 1 Conventional Process for Cutting IC Dies from a Wafer ThicknessPower Speed Passes Machine (mils) (Watts) (mm/s) (X-Y) ALSI 4 4.5 1853.5 ALSI 5 4.5 185 3.5 ALSI 8 5 185 4.5 DISCO 4 4.75 250 4 DISCO 5 5.5250 4 DISCO 8 7.5 250 4

Table 2 shows parameters of the laser utilized for the improved lasercutting strategies 30′, 60′, including the thickness (in mils) of thewafer 10, the power level of the laser used during the cutting process,the speed at which the laser moved over the wafer 10, and the number ofpasses in each of the X and Y directions (e.g., 2 passes in the Xdirection, 2 passes in Y direction) used during the dicing of the ICdies 20 from the wafer 10.

TABLE 2 Process for Cutting IC Dies from a Wafer Thickness Power SpeedPasses Machine (mils) (Watts) (mm/s) (X-Y) ALSI 4 4.5 174 2 ALSI 5 4.5174 2 ALSI 8 5.5 174 3 DISCO 4 4.75 225 2 DISCO 5 7.25 225 2 DISCO 8 9.5225 2

Table 3 shows results of different tests conducted using an ALSI machinewith the improved laser cutting strategy 30′ at different power levelsusing a wafer 10 having a thickness of 8 mils. As shown on Table 3,power levels of 5 W, 5.5 W and 6.0 W all showed good separation in bothaxes (e.g., X and Y axes), but the test using 6.0 W laser power startedshowing burn marks on the IC die 20. Additionally, the cycle time forprocessing (e.g., cutting) the IC dies 20 from the wafer 10 with the 5.5W laser power (with 3 passes in X and Y directions, as shown in Table 2above) was approximately 12 minutes, which is a reduction ofapproximately 55% from the cycle time of 22 minutes with theconventional laser cutting strategies previously used with an ALSImachine (e.g., using a 5.0 W power and 4.5 passes in X and Y direction,as shown in Table 1).

TABLE 3 Process for Cutting IC Dies from a Wafer Passes Power (X-Y)(Watts) Result 3 4.5 Material unmolded at X axis 3 5 Good separation onboth axes 3 5.5 Good separation on both axes 3 6.0 Good separation onboth axes, but start showing burn marks

Accordingly, the improved laser cutting strategies or methods 30′, 60′,including the optimization of the power of the laser used to dice thewafer 10, advantageously reduced the cycle time for processing IC dies20 from wafers 10 by 55%, thereby increasing the output (e.g., units perhour) of IC dies 20 (e.g., increase units per hour by approximately55%). Additionally, the improved laser cutting strategies or methods30′, 60′ advantageously reduced delamination issues in the IC dies 20 byapproximately 90%, thereby increasing the yield of IC dies 20. Further,the improved laser cutting strategies 30′, 60′ advantageously exhibitedno impact on dicing quality in the IC dies 20 (e.g., as shown in FIG. 5, the IC die 20 was fully cut along both axes without showing burnmarks). Additionally, the improvements provided by the laser cuttingstrategies or methods 30′, 60′ advantageously facilitated the processingof IC dies 20 utilizing only laser cutting machines (e.g., ALSI or DISCOmachines), and allowed the nonuse of mechanical (e.g., diamond cutting)scribe and break machines.

FIG. 9A is a schematic diagram of a wireless communication device 320that includes filters 323 in a radio frequency front end 322 accordingto an embodiment. The filters 323 can include one or more SAWresonators. The wireless communication device 320 can be any suitablewireless communication device. For instance, a wireless communicationdevice 320 can be a mobile phone, such as a smart phone. As illustrated,the wireless communication device 320 includes an antenna 321, an RFfront end 322, a transceiver 324, a processor 325, a memory 326, and auser interface 327. The antenna 321 can transmit/receive RF signalsprovided by the RF front end 322. Such RF signals can include carrieraggregation signals. Although not illustrated, the wirelesscommunication device 320 can include a microphone and a speaker incertain applications.

The RF front end 322 can include one or more power amplifiers, one ormore low noise amplifiers, one or more RF switches, one or more receivefilters, one or more transmit filters, one or more duplex filters, oneor more multiplexers, one or more frequency multiplexing circuits, thelike, or any suitable combination thereof. The RF front end 322 cantransmit and receive RF signals associated with any suitablecommunication standards. The filters 323 can include SAW resonators of aSAW component that includes any suitable combination of featuresdiscussed with reference to any embodiments discussed above.

The transceiver 324 can provide RF signals to the RF front end 322 foramplification and/or other processing. The transceiver 324 can alsoprocess an RF signal provided by a low noise amplifier of the RF frontend 322. The transceiver 324 is in communication with the processor 325.The processor 325 can include an IC die, such as an IC die made inaccordance with the methods disclosed herein. The processor 325 can be abaseband processor. The processor 325 can provide any suitable base bandprocessing functions for the wireless communication device 320. Thememory 326 can be accessed by the processor 325. The memory 326 canstore any suitable data for the wireless communication device 320. Theuser interface 327 can be any suitable user interface, such as a displaywith touch screen capabilities.

FIG. 9B is a schematic diagram of a wireless communication device 330that includes filters 323 in a radio frequency front end 322 and asecond filter 333 in a diversity receive module 332. The wirelesscommunication device 330 is like the wireless communication device 320of FIG. 9A, except that the wireless communication device 330 alsoincludes diversity receive features. As illustrated in FIG. 9B, thewireless communication device 330 includes a diversity antenna 331, adiversity module 332 configured to process signals received by thediversity antenna 331 and including filters 333, and a transceiver 334in communication with both the radio frequency front end 322 and thediversity receive module 332. The filters 333 can include one or moreSAW resonators that include any suitable combination of featuresdiscussed with reference to any embodiments discussed above.

While certain embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms. Furthermore, various omissions, substitutions and changes in thesystems and methods described herein may be made without departing fromthe spirit of the disclosure. For example, one portion of one of theembodiments described herein can be substituted for another portion inanother embodiment described herein. The accompanying claims and theirequivalents are intended to cover such forms or modifications as wouldfall within the scope and spirit of the disclosure. Accordingly, thescope of the present inventions is defined only by reference to theappended claims.

Features, materials, characteristics, or groups described in conjunctionwith a particular aspect, embodiment, or example are to be understood tobe applicable to any other aspect, embodiment or example described inthis section or elsewhere in this specification unless incompatibletherewith. All of the features disclosed in this specification(including any accompanying claims, abstract and drawings), and/or allof the steps of any method or process so disclosed, may be combined inany combination, except combinations where at least some of suchfeatures and/or steps are mutually exclusive. The protection is notrestricted to the details of any foregoing embodiments. The protectionextends to any novel one, or any novel combination, of the featuresdisclosed in this specification (including any accompanying claims,abstract and drawings), or to any novel one, or any novel combination,of the steps of any method or process so disclosed.

Furthermore, certain features that are described in this disclosure inthe context of separate implementations can also be implemented incombination in a single implementation. Conversely, various featuresthat are described in the context of a single implementation can also beimplemented in multiple implementations separately or in any suitablesubcombination. Moreover, although features may be described above asacting in certain combinations, one or more features from a claimedcombination can, in some cases, be excised from the combination, and thecombination may be claimed as a subcombination or variation of asubcombination.

Moreover, while operations may be depicted in the drawings or describedin the specification in a particular order, such operations need not beperformed in the particular order shown or in sequential order, or thatall operations be performed, to achieve desirable results. Otheroperations that are not depicted or described can be incorporated in theexample methods and processes. For example, one or more additionaloperations can be performed before, after, simultaneously, or betweenany of the described operations. Further, the operations may berearranged or reordered in other implementations. Those skilled in theart will appreciate that in some embodiments, the actual steps taken inthe processes illustrated and/or disclosed may differ from those shownin the figures. Depending on the embodiment, certain of the stepsdescribed above may be removed, others may be added. Furthermore, thefeatures and attributes of the specific embodiments disclosed above maybe combined in different ways to form additional embodiments, all ofwhich fall within the scope of the present disclosure. Also, theseparation of various system components in the implementations describedabove should not be understood as requiring such separation in allimplementations, and it should be understood that the describedcomponents and systems can generally be integrated together in a singleproduct or packaged into multiple products.

For purposes of this disclosure, certain aspects, advantages, and novelfeatures are described herein. Not necessarily all such advantages maybe achieved in accordance with any particular embodiment. Thus, forexample, those skilled in the art will recognize that the disclosure maybe embodied or carried out in a manner that achieves one advantage or agroup of advantages as taught herein without necessarily achieving otheradvantages as may be taught or suggested herein.

Conditional language, such as “can,” “could,” “might,” or “may,” unlessspecifically stated otherwise, or otherwise understood within thecontext as used, is generally intended to convey that certainembodiments include, while other embodiments do not include, certainfeatures, elements, and/or steps. Thus, such conditional language is notgenerally intended to imply that features, elements, and/or steps are inany way required for one or more embodiments or that one or moreembodiments necessarily include logic for deciding, with or without userinput or prompting, whether these features, elements, and/or steps areincluded or are to be performed in any particular embodiment.

Conjunctive language such as the phrase “at least one of X, Y, and Z,”unless specifically stated otherwise, is otherwise understood with thecontext as used in general to convey that an item, term, etc. may beeither X, Y, or Z. Thus, such conjunctive language is not generallyintended to imply that certain embodiments require the presence of atleast one of X, at least one of Y, and at least one of Z.

Language of degree used herein, such as the terms “approximately,”“about,” “generally,” and “substantially” as used herein represent avalue, amount, or characteristic close to the stated value, amount, orcharacteristic that still performs a desired function or achieves adesired result. For example, the terms “approximately”, “about”,“generally,” and “substantially” may refer to an amount that is withinless than 10% of, within less than 5% of, within less than 1% of, withinless than 0.1% of, and within less than 0.01% of the stated amount. Asanother example, in certain embodiments, the terms “generally parallel”and “substantially parallel” refer to a value, amount, or characteristicthat departs from exactly parallel by less than or equal to 15 degrees,10 degrees, 5 degrees, 3 degrees, 1 degree, or 0.1 degree.

The scope of the present disclosure is not intended to be limited by thespecific disclosures of preferred embodiments in this section orelsewhere in this specification, and may be defined by claims aspresented in this section or elsewhere in this specification or aspresented in the future. The language of the claims is to be interpretedbroadly based on the language employed in the claims and not limited tothe examples described in the present specification or during theprosecution of the application, which examples are to be construed asnon-exclusive.

What is claimed is:
 1. A method of separating plurality of integratedcircuit dies from a wafer, comprising: making a first plurality ofcutting passes consisting of only three cutting passes in a same firstdirection with a laser along a first die street of an integrated circuitdie of the plurality of integrated circuit dies, the first die streetextending along a first axis on the wafer; and making a second pluralityof cutting passes consisting of only three cutting passes in a samesecond direction with the laser along a second die street of theintegrated circuit die, the second die street extending along a secondaxis on the wafer being generally perpendicular to the first axis, andthe first plurality of cutting passes along the first die street beingaltematingly and consecutively made with the second plurality of cuttingpasses along the second die street to thereby fully separate theintegrated circuit die from the wafer along the first and second axes,the making of the first plurality and the second plurality of cuttingpasses with the laser along the first and second die streets on thewafer including cutting with the laser at a same power level along thefirst and second die streets.
 2. The method of claim 1 wherein the firstplurality of cutting passes along the first die street are made from anupper edge to a lower edge of the integrated circuit die.
 3. The methodof claim 1 wherein each of the second plurality of cutting passes alongthe second die street are made from a left edge to a right edge of theintegrated circuit die.
 4. The method of claim 1 wherein processing ofthe wafer to separate all integrated circuit dies on the wafer takesapproximately 12 minutes.
 5. The method of claim 1 wherein delaminationdefects in the separated integrated circuit die are reduced byapproximately 90%.
 6. A method of separating plurality of integratedcircuit dies from a wafer, comprising: making a first plurality ofcutting passes with a laser along a first die street of an integratedcircuit die of the plurality of integrated circuit dies, the first diestreet extending along a first axis on the wafer, the first plurality ofcutting passes being only three cutting passes in a same first directionalong the first axis; and making a second plurality of cutting passeswith the laser along a second die street of the integrated circuit die,the second die street extending along a second axis on the wafer beinggenerally perpendicular to the first axis, the second plurality ofcutting passes being only three cutting passes in a same seconddirection along the second axis, the first plurality of cutting passesalong the first die street being altematingly and consecutively madewith the second plurality of cutting passes along the second die streetto thereby fully separate the integrated circuit die from the waferalong the first and second axes, the making of the first plurality andthe second plurality of cutting passes with the laser along the firstand second die streets on the wafer including cutting with the laser ata same power level along the first and second die streets.
 7. The methodof claim 6 wherein each of the first plurality of cutting passes alongthe first die street are made from an upper edge to a lower edge of theintegrated circuit die.
 8. The method of claim 6 wherein each of thesecond plurality of cutting passes along the second die street are madefrom a left edge to a right edge of the integrated circuit die.
 9. Themethod of claim 6 wherein the separating the plurality of integratedcircuit dies on the wafer takes approximately 12 minutes.
 10. The methodof claim 1 wherein the same power level is 5.5 watts.
 11. The method ofclaim 6 wherein the same power level is 5.5 watts.